RD07MUS2B mosfet equivalent, silicon rf power mosfet.
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode.
3
(0.25) (.
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
2
FEATURES
High power gain and High Efficiency. Typical Po.
RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
1
4.9+/-0.15 1.0+/-0.05
2
FEATURES
High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.
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